AIXTRON Joins Research to Boost Energy Efficiency in SiC Layer Production

AIXTRON SE has announced its participation in a collaborative research project aimed at increasing energy efficiency in the production of silicon carbide (SiC) semiconductor layers. The €28.4 million initiative, titled "Increasing Energy Efficiency in SiC Epitaxy," is led by AIXTRON and funded by the German Federal Ministry of Education and Research. The project focuses on developing AI-based methods to enhance material and energy efficiency, targeting a 50% reduction in electrical energy usage per unit area in SiC semiconductor manufacturing.

The collaboration involves Fraunhofer IISB and bimanu Cloud Solutions GmbH. Fraunhofer brings expertise in SiC research, operating Germany's only continuous 150 mm SiC development line. Bimanu will contribute its expertise in data integration and analysis. AIXTRON will focus on tool technology research, setting up several test systems for simulation model verification and development.