ROHM's SiC MOSFET Integrated into AI Server Power Systems

ROHM Co., Ltd. has confirmed that its 750V SiC MOSFET is now part of a BBU (Battery Backup Unit) for AI server power supplies. The shift towards HVDC (High-Voltage Direct Current) architectures in AI servers responds to rising power demands driven by generative AI. In this scenario, ROHM's SiC power device is vital for future power systems.

As AI enhances GPU performance, data centers are adopting HVDC frameworks to cut transmission losses. In high-voltage contexts, BBUs and CUs are crucial for system protection during power disruptions. The "SCT4013DLL," a 750V SiC MOSFET, is integrated into a +400V / -400V power setup for AI servers. Its 175C junction temperature tolerance ensures reliable BBU operation amid rising heat and power.

For upcoming 800VDC systems, ROHM’s 750V SiC MOSFETs are apt, given their compatibility with 560V battery pack voltages. Continued growth in AI server markets prompts ROHM to boost SiC, GaN, and silicon-based device development, aiming for better power efficiency and sustainability.