USI Unveils SiC Chip-Embedded Packaging at PCIM Europe 2026

USI, a leader in electronic design and manufacturing, has introduced a new power semiconductor packaging technology at PCIM Europe 2026. The innovative approach integrates silicon carbide (SiC) dies into multilayer substrates, utilizing Single-Side Copper Exposed packaging to improve electrical insulation and reduce conduction loss. This development targets demands for efficient, thermally superior, and power-dense solutions.

The technology's wire-bondless architecture allows larger chip integration, enhancing power density while maintaining a compact design. According to Karl Chen, Senior Director at USI, these advances are crucial for high-efficiency power systems in electric vehicles, AI data centers, and humanoid robotics. The innovation promises to support the transition to next-gen electrified platforms in the automotive and industrial sectors.

At PCIM Europe 2026, held in Nuremberg, USI will present its latest packaging technology and power module solutions. The event offers visitors a chance to engage with USI experts about harnessing these technologies for improved efficiency and reliability in various applications.